IndiumV3, Russie, Analysis, bibRecord, 000403

Electroluminescent Studies of Emission Characteristics of InGaAsN/GaAs Injection Lasers in a Wide Temperature Range

Identifieur interne : 000403 ( Russie/Analysis ); précédent : 000402; suivant : 000404

Electroluminescent Studies of Emission Characteristics of InGaAsN/GaAs Injection Lasers in a Wide Temperature Range

Auteurs : RBID : Pascal:04-0286218

Descripteurs français

Pascal (Inist)
- 7860F, 4255P, 7867D, Etude expérimentale, Laser semiconducteur, Dispositif électroluminescent, Indium composé, Gallium arséniure, Azote composé, Puits quantique semiconducteur, Densité courant.

English descriptors

KwdEn :
- Current density, Electroluminescent devices, Experimental study, Gallium arsenides, Indium compounds, Nitrogen compounds, Semiconductor lasers, Semiconductor quantum wells.

Abstract

Light-current, spectral, and far-field characteristics of InGaAsN injection lasers on GaAs substrates were studied in a wide temperature range (77-300 K) at various driving current densities. The increase in indium content in InGaAsN solid solution results in a modification of the QW structure, which is manifested in the spontaneous formation of InGaAsN nanoclusters. These changes result in N-shaped temperature dependences of the threshold current density and slope efficiency. © 2004 MAIK Nauka / Interperiodica .

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Pascal:04-0286218

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Electroluminescent Studies of Emission Characteristics of InGaAsN/GaAs Injection Lasers in a Wide Temperature Range</title>
<author><name sortKey="Karachinsky, L Ya" uniqKey="Karachinsky L">L. Ya. Karachinsky</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Russie</country>
<wicri:regionArea>Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg</wicri:regionArea>
<wicri:noRegion>Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Gordeev, N Yu" uniqKey="Gordeev N">N. Yu. Gordeev</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Russie</country>
<wicri:regionArea>Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg</wicri:regionArea>
<wicri:noRegion>Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Novikov, I I" uniqKey="Novikov I">I. I. Novikov</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Russie</country>
<wicri:regionArea>Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg</wicri:regionArea>
<wicri:noRegion>Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Maximov, M V" uniqKey="Maximov M">M. V. Maximov</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Russie</country>
<wicri:regionArea>Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg</wicri:regionArea>
<wicri:noRegion>Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Kovsh, A R" uniqKey="Kovsh A">A. R. Kovsh</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Russie</country>
<wicri:regionArea>Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg</wicri:regionArea>
<wicri:noRegion>Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia</wicri:noRegion>
</affiliation>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Industrial Technology Research Institute, Hsinchu 310, Taiwan, ROC</s1>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country xml:lang="fr" wicri:curation="lc">République populaire de Chine</country>
<wicri:regionArea>Industrial Technology Research Institute, Hsinchu 310, Taiwan</wicri:regionArea>
<wicri:noRegion>Industrial Technology Research Institute, Hsinchu 310, Taiwan, ROC</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Wang, J S" uniqKey="Wang J">J. S. Wang</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Industrial Technology Research Institute, Hsinchu 310, Taiwan, ROC</s1>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country xml:lang="fr" wicri:curation="lc">République populaire de Chine</country>
<wicri:regionArea>Industrial Technology Research Institute, Hsinchu 310, Taiwan</wicri:regionArea>
<wicri:noRegion>Industrial Technology Research Institute, Hsinchu 310, Taiwan, ROC</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Hsiao, R S" uniqKey="Hsiao R">R. S. Hsiao</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Industrial Technology Research Institute, Hsinchu 310, Taiwan, ROC</s1>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country xml:lang="fr" wicri:curation="lc">République populaire de Chine</country>
<wicri:regionArea>Industrial Technology Research Institute, Hsinchu 310, Taiwan</wicri:regionArea>
<wicri:noRegion>Industrial Technology Research Institute, Hsinchu 310, Taiwan, ROC</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Chi, J Y" uniqKey="Chi J">J. Y. Chi</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Industrial Technology Research Institute, Hsinchu 310, Taiwan, ROC</s1>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country xml:lang="fr" wicri:curation="lc">République populaire de Chine</country>
<wicri:regionArea>Industrial Technology Research Institute, Hsinchu 310, Taiwan</wicri:regionArea>
<wicri:noRegion>Industrial Technology Research Institute, Hsinchu 310, Taiwan, ROC</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Ustinov, V M" uniqKey="Ustinov V">V. M. Ustinov</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Russie</country>
<wicri:regionArea>Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg</wicri:regionArea>
<wicri:noRegion>Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Ledentsov, N N" uniqKey="Ledentsov N">N. N. Ledentsov</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Russie</country>
<wicri:regionArea>Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg</wicri:regionArea>
<wicri:noRegion>Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia</wicri:noRegion>
</affiliation>
<affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Institut fur Festkorperphysik, Technische Universitat Berlin, D-10623 Berlin, Germany</s1>
<sZ>10 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">Allemagne</country>
<wicri:regionArea>Institut fur Festkorperphysik, Technische Universitat Berlin, D-10623 Berlin</wicri:regionArea>
<placeName><region type="land" nuts="3">Berlin</region>
<settlement type="city">Berlin</settlement>
</placeName>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">04-0286218</idno>
<date when="2004-06">2004-06</date>
<idno type="stanalyst">PASCAL 04-0286218 AIP</idno>
<idno type="RBID">Pascal:04-0286218</idno>
<idno type="wicri:Area/Main/Corpus">00B439</idno>
<idno type="wicri:Area/Main/Repository">00A439</idno>
<idno type="wicri:Area/Russie/Extraction">000403</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">1063-7826</idno>
<title level="j" type="abbreviated">Semiconductors</title>
<title level="j" type="main">Semiconductors</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Current density</term>
<term>Electroluminescent devices</term>
<term>Experimental study</term>
<term>Gallium arsenides</term>
<term>Indium compounds</term>
<term>Nitrogen compounds</term>
<term>Semiconductor lasers</term>
<term>Semiconductor quantum wells</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>7860F</term>
<term>4255P</term>
<term>7867D</term>
<term>Etude expérimentale</term>
<term>Laser semiconducteur</term>
<term>Dispositif électroluminescent</term>
<term>Indium composé</term>
<term>Gallium arséniure</term>
<term>Azote composé</term>
<term>Puits quantique semiconducteur</term>
<term>Densité courant</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Light-current, spectral, and far-field characteristics of InGaAsN injection lasers on GaAs substrates were studied in a wide temperature range (77-300 K) at various driving current densities. The increase in indium content in InGaAsN solid solution results in a modification of the QW structure, which is manifested in the spontaneous formation of InGaAsN nanoclusters. These changes result in N-shaped temperature dependences of the threshold current density and slope efficiency. © 2004 MAIK  Nauka / Interperiodica .</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1063-7826</s0>
</fA01>
<fA02 i1="01"><s0>SMICES</s0>
</fA02>
<fA03 i2="1"><s0>Semiconductors</s0>
</fA03>
<fA05><s2>38</s2>
</fA05>
<fA06><s2>6</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Electroluminescent Studies of Emission Characteristics of InGaAsN/GaAs Injection Lasers in a Wide Temperature Range</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>KARACHINSKY (L. Ya.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>GORDEEV (N. Yu.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>NOVIKOV (I. I.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>MAXIMOV (M. V.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>KOVSH (A. R.)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>WANG (J. S.)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>HSIAO (R. S.)</s1>
</fA11>
<fA11 i1="08" i2="1"><s1>CHI (J. Y.)</s1>
</fA11>
<fA11 i1="09" i2="1"><s1>USTINOV (V. M.)</s1>
</fA11>
<fA11 i1="10" i2="1"><s1>LEDENTSOV (N. N.)</s1>
</fA11>
<fA14 i1="01"><s1>Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia</s1>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
<sZ>9 aut.</sZ>
<sZ>10 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Industrial Technology Research Institute, Hsinchu 310, Taiwan, ROC</s1>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Institut fur Festkorperphysik, Technische Universitat Berlin, D-10623 Berlin, Germany</s1>
<sZ>10 aut.</sZ>
</fA14>
<fA20><s1>727-731</s1>
</fA20>
<fA21><s1>2004-06</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>12492</s2>
</fA43>
<fA44><s0>8100</s0>
<s1>© 2004 American Institute of Physics. All rights reserved.</s1>
</fA44>
<fA47 i1="01" i2="1"><s0>04-0286218</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Semiconductors</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Light-current, spectral, and far-field characteristics of InGaAsN injection lasers on GaAs substrates were studied in a wide temperature range (77-300 K) at various driving current densities. The increase in indium content in InGaAsN solid solution results in a modification of the QW structure, which is manifested in the spontaneous formation of InGaAsN nanoclusters. These changes result in N-shaped temperature dependences of the threshold current density and slope efficiency. © 2004 MAIK  Nauka / Interperiodica .</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70H60F</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B40B55P</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B70H67D</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>7860F</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>4255P</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>7867D</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Etude expérimentale</s0>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Experimental study</s0>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Laser semiconducteur</s0>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Semiconductor lasers</s0>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Dispositif électroluminescent</s0>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Electroluminescent devices</s0>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Indium composé</s0>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Indium compounds</s0>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Gallium arséniure</s0>
<s2>NK</s2>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Azote composé</s0>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Nitrogen compounds</s0>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Puits quantique semiconducteur</s0>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Semiconductor quantum wells</s0>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Densité courant</s0>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Current density</s0>
</fC03>
<fN21><s1>173</s1>
</fN21>
<fN47 i1="01" i2="1"><s0>0424M000794</s0>
</fN47>
</pA>
</standard>
</inist>
</record>

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Electroluminescent Studies of Emission Characteristics of InGaAsN/GaAs Injection Lasers in a Wide Temperature Range

Electroluminescent Studies of Emission Characteristics of InGaAsN/GaAs Injection Lasers in a Wide Temperature Range

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri